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Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors
Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).
Cardiac Cytoarchitecture
This book presents a collection of expert reviews on different subcellular compartments of the cardiomyocyte, addressing fundamental questions such as how these compartments are assembled during development, how they are changed in and by disease and which signaling pathways have been implicated in these processes so far. As such, it offers the first overview of the cell biology of heart disease of its kind, addressing the needs of cell biology students specializing in vascular and cardiac biology, as well as those of cardiologists and researchers in the field of cell biology.
Ferroelectricity in Doped Hafnium Oxide
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the b...
Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes
This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others, the stability of the ferroelectric switching effect could be demonstrated in a temperature range of almost 400 K. Moreover, nanosecond switch...
Formation of Ferroelectricity in Hafnium Oxide Based Thin Films
In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With thes...
Headstrap
This captivating chronicle delves into the untold story of a tribe of people who have played a significant role in mountain exploration and climbing in the Himalayas. Situated in northern India, Darjeeling was developed as a colonial retreat by the British in the early 1830s and soon became famous for its tea gardens, attracting locals from around the region, Nepal, and Tibet in search of work. When Darjeeling became the jumping-off point for early Himalayan expeditions, workers from the Sherpa and Bhutia communities soon established themselves as the preferred high-altitude porters, bringing fame, entwined with tales of valor, courage, and sacrifice, to the city. These are some of their stories. Over the course of a decade, authors Nandini Purandare and Deepa Balsavar conducted a series of interviews with Sherpas from Darjeeling, as well as their family members, descendants, friends, and contemporary climbers. Headstrap weaves a vivid tapestry of this particular Sherpa community, giving them the recognition in mountaineering literature that they deserve.
