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In the modern world of ever smaller devices and nanotechnology, electron crystallography emerges as the most important method capable of determining the structure of minute objects down to the size of individual atoms. Crystals of only a few millionths of a millimetre are studied. This is the first textbook explaining how this is done. Great attention is given to symmetry in crystals and how it manifests itself in electron microscopy and electron diffraction, and how this symmetry can be determined and taken advantage of in achieving improved electron microscopy images and solving crystal structures from electron diffraction patterns. Theory and practice are combined; experimental images, di...
Microbeam Analysis provides a major forum for the discussion of the latest microanalysis techniques using electron, ion, and photon beams. The volume contains 250 papers from the leading researchers in this advancing field. Researchers in physics, materials science, and electrical and electronic engineering will find useful information in this volume.
A publication of the French Society of Microscopies, Large-Angle Convergent-Beam Electron Diffraction Applications to Crystal Defects is devoted to an important aspect of electron diffraction. Convergent-beam diffraction is capable of furnishing remarkably accurate crystallographic information. In this book, the author goes well beyond a simple presentation of the method. The description of convergent-beam electron diffraction and especially of LACBED is preceded by several preparatory chapters, in which the principles of diffraction and the nature of electron-matter interactions are clearly set out. An entire chapter is concerned with instrumentation. Another on the interpretation of diffraction patterns enables the reader to master all stages in the process. The book ends with a long chapter in which numerous applications concerned with the characterization of crystal defects are examined and analyzed.
The 9th edition of the World Directory of Crystallographers and of Other Scientists Employing Crystallographic Methods, which contains 7907 entries embracing 72 countries, differs considerably from the 8th edition, published in 1990. The content has been updated, and the methods used to acquire the information presented and to produce this new edition of the Directory have involved the latest advances in technology. The Directory is now also available as a regularly updated electronic database, accessible via e-mail, Telnet, Gopher, World-Wide Web, and Mosaic. Full details are given in an Appendix to the printed edition.
This text is a companion volume to Transmission Electron Microscopy: A Textbook for Materials Science by Williams and Carter. The aim is to extend the discussion of certain topics that are either rapidly changing at this time or that would benefit from more detailed discussion than space allowed in the primary text. World-renowned researchers have contributed chapters in their area of expertise, and the editors have carefully prepared these chapters to provide a uniform tone and treatment for this exciting material. The book features an unparalleled collection of color figures showcasing the quality and variety of chemical data that can be obtained from today’s instruments, as well as key ...
As a complement to The Beginnings of Electron Microscopy, Advances in Imaging and Electron Physics is pleased to present Volume 96, The Growth of Electron Microscopy. This comprehensive collection of articles surveys the accomplishments of various national groups that comprise the International Federation of Societies of Electron Microscopy (IFSEM).
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
A brief historical account of the background leading to the publication of the first four editions of the World Directory of Crystallographers was presented by G. Boom in his preface to the Fourth Edition, published late in 1971. That edition was produced by traditional typesetting methods from compilations of biographical data prepared by national Sub-Editors. The major effort required to produce a directory by manual methods provided the impetus to use computer techniques for the Fifth Edition. The account of the production of the first computer assisted Directory was described by S.C. Abrahams in the preface of the Fifth Edition. Computer composition, which required a machine readable dat...