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Innovations in Army Energy and Power Materials Technologies
This compendium reports fundamental science and engineering advances of the US Army Research Labratory (ARL) within the area of Energy and Power technologies. Although, in general, ARL's Materials Research encompasses a broad range of materials technologies (e.g.: Photonics, Electronics, Biological and Bio-inspired Materials, Structural Materials, High Strain and Ballistic Materials, and Manufacturing Science), this publication specifically addresses selected energy and power material related work at ARL. While this work includes electrochemical energy storage (batteries and capacitors) and electrochemical energy conversion (fuel cells, photoelectrochemistry, and photochemistry), special emp...
Proceedings of 9th World Congress on Materials Science and Engineering 2017
June 12-14, 2017 Rome, Italy Key Topics : Materials Science and Engineering, Nanomaterials and Nanotechnology, Biomaterials and Medical Devices, Polymer Science and Technology, Electronic, Optical and Magnetic Materials, Emerging Smart Materials, Materials for Energy and Environmental Sustainability, Metals, Mettalurgy and Materials, Physics and Cemistry of Materials, Mechanics, Characterization Techniques and Equipments, Ceramics and Composite Materials, Entrepreneurs Investment Meet,
Substrate Engineering for Defect Reduction and Microsctructure Control in the Growth of Indium Arsenide on (100) Gallium Arsenide
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The RF and Microwave Handbook - 3 Volume Set
By 1990 the wireless revolution had begun. In late 2000, Mike Golio gave the world a significant tool to use in this revolution: The RF and Microwave Handbook. Since then, wireless technology spread across the globe with unprecedented speed, fueled by 3G and 4G mobile technology and the proliferation of wireless LANs. Updated to reflect this tremendous growth, the second edition of this widely embraced, bestselling handbook divides its coverage conveniently into a set of three books, each focused on a particular aspect of the technology. Six new chapters cover WiMAX, broadband cable, bit error ratio (BER) testing, high-power PAs (power amplifiers), heterojunction bipolar transistors (HBTs), ...
GaN and Related Alloys: Volume 537
This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.
Evolution of Surface and Thin Film Microstructure: Volume 280
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Compound Semiconductors Strained Layers and Devices
In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possible to describe all this work in a monograph of this size, Compound Semiconductors Strained Layers and Devices provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi strained layers are discussed for comparison to clarify the underlying physics. The effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semico...
Silicon Carbide and Related Materials 2004
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions. The book comprises the proceedings of the 5th edition of the European Conference on Silicon Carbide and Related Materials, held from the 31st August to the 4th September 2004 in Bologna, Italy. This conference series here continued its tradition of being the main European forum for exchanging results, and discussing progress, between those university and...
